PART |
Description |
Maker |
IDT74FCT162H272CTPA IDT74FCT162H272CTPAB IDT74FCT1 |
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, CDFP56 FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, PDSO56 FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER 快速CMOS 12位同步总线交换 CAP 47UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-220 CAP 4.7UF 35V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-700
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
UPD44323362F1-C40-FJ1 UPD44323362 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC[NEC]
|
UPD4482322GF-A44 UPD4482162GF-A44 UPD4482362GF-C60 |
(UPD4482162/2182/2322/2362) 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
|
NEC[NEC]
|
UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM x16 Fast Synchronous SRAM x18 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
TC7MH163FK TC7MH161FK |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 东芝的CMOS数字集成电路硅单 Synchronous Presettable 4-Bit Binary Counter Asynchronous Clear Synchronous Presettable 4-Bit Binary Counter Synchronous Clear
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
5962F9671601VEC 5962F9671601VXC FN4095 ACTS161MS A |
Radiation Hardened 4-Bit Synchronous Counter From old datasheet system Synchronous Counter, 4-Bit, TTL Inputs, Rad-Hard, Advanced Logic, CMOS
|
INTERSIL[Intersil Corporation]
|
KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics Samsung semiconductor
|
SLA24C04-D SLA24C04-S SLA24C04-D-3 SLA24C04-S-3 Q6 |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 4千位512 × 8位串行CMOS EEPROM的,I2C同步2线总线 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
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Siemens Semiconductor Group SIEMENS AG SIEMENS A G
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